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hexfet ? power mosfet
www.irf.com 1 auirf7103q automotive grade features advanced planar technology dual n channel mosfet low on-resistance dynamic dv/dt rating 175c operating temperature fast switching lead-free, rohs compliant automotive qualified* description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit com- bined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an ex- tremely efficient and reliable device for use in auto- motive and a wide variety of other applications. d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 so-8 auirf7103q absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 50v r ds(on) max. 130m ? i d 3.0a parameter units i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v a i dm pulsed drain current p d @t a = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ? jl junction-to-drain lead ??? 20 c/w r ? ja junction-to-ambient ??? 62.5 -55 to + 175 2.4 16 12 see fig. 16c, 16d, 19, 20 20 22 max. 3.0 2.5 25
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repetitive rating; pulse width limited by max. junction temperature. pulse width ?? 400 s; duty cycle ?? surface mounted on 1 in square cu board. starting t j = 25c, l = 4.9mh, r g = 25 ? , i as = 3.0a. (see figure 12). i sd ? 2.0a, di/dt ? 155a/ s, v dd ?? v (br)dss , t j ? 175c. limited by t jmax , see fig.16c, 16d, 19, 20 for typical repetitive avalanche performance. s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 50 ??? ??? v ? ? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 10 15 q gs gate-to-source charge ??? 1.2 ??? q gd gate-to-drain ("miller") charge ??? 2.8 ??? t d(on) turn-on delay time ??? 5.1 ??? t r rise time ??? 1.7 ??? t d(off) turn-off delay time ??? 15 ??? t f fall time ??? 2.3 ??? c iss input capacitance ??? 255 ??? c oss output capacitance ??? 69 ??? c rss reverse transfer capacitance ??? 29 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 35 53 ns t j = 25c,i f = 1.5a q rr reverse recovery charge ??? 45 67 nc di/dt = 100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) 12 ??? ??? ??? ??? 3.0 i d = 1.0a r g = 6.0 ? ? v gs = 0v v ds = 25v ? = 1.0mhz na a v ds = 40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 55c v gs = 10v v gs = -20v v ds = 40v v dd = 25v a pf ns nc t j = 25c, i s = 1.5a, v gs = 0v integral reverse p-n junction diode. conditions mosfet symbol showing the conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 3.0a r ds(on) static drain-to-source on-resistance m ? v gs = 4.5v, i d = 1.5a v ds = v gs , i d = 250 a conditions v ds = 15v, i d = 3.0a i d = 2.0a v gs = 20v
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% & &'& qualification information ? so-8 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 1125v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m1a (+/- 50v) ??? aec-q101-002 human body model class h0 (+/- 250v) ??? aec-q101-001
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fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 3.0a 3.0 6.0 9.0 12.0 15.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) t j = 25c t j = 175c v ds = 25v 20 s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20 s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v
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fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 0.1 1 10 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 0 3 6 9 12 0 3 6 9 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 2.0a v = 10v ds v = 25v ds v = 40v ds 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
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fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
???? ??????? + - 25 50 75 100 125 150 175 0.0 0.6 1.2 1.8 2.4 3.0 t , case temperature ( c) i , drain current (a) c d 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a
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fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14. typical threshold voltage vs. junction temperature typical power vs. time 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 -v gs, gate -to -source voltage (v) 0.09 0.10 0.11 0.12 0.13 0.14 0.15 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 3.0a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.3 1.5 1.8 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 0 5 10 15 20 25 30 35 40 i d , drain current (a) 0.000 0.500 1.000 1.500 2.000 2.500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v v gs = 4.5v 1.00 10.00 100.00 1000.00 time (sec) 0 10 20 30 40 50 60 70 p o w e r ( w )
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q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - ( fig 17. gate charge test circuit fig 18. basic gate charge waveform fig 16a. maximum avalanche energy vs. drain current fig 16d. unclamped inductive waveforms fig 16c. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 12 24 36 48 60 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.2a 2.5a 3.0a
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fig 19. typical avalanche current vs.pulsewidth fig 20. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 tav (sec) 0.01 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 0.10 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 5 10 15 20 25 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 3.0a
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so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking

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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches)
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ordering information base part number package type standard pack complete part number form quantity auirf7103q so-8 tube 95 auirf7103q tape and reel 4000 AUIRF7103QTR
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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or ?enhanced plastic.? only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyer?s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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